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1 edition of Effects of 67.5 MeV electron irradation on Y-Ba-Cu-O high-temperature superconductors found in the catalog.

Effects of 67.5 MeV electron irradation on Y-Ba-Cu-O high-temperature superconductors

Eric Lynn Sweigard

Effects of 67.5 MeV electron irradation on Y-Ba-Cu-O high-temperature superconductors

by Eric Lynn Sweigard

  • 242 Want to read
  • 23 Currently reading

Published .
Written in English

    Subjects:
  • Physics

  • Edition Notes

    ContributionsBuskirk, Fred R.
    The Physical Object
    Pagination83 p.
    Number of Pages83
    ID Numbers
    Open LibraryOL25517322M

    water and water-like tissues, averaged over the electron’s range, is about 2 MeV/cm. IAEA Radiation Oncology Physics: A Handbook for Teachers and Students - Slide 1 CENTRAL AXIS DEPTH DOSE DISTRIBUTIONS Inverse square law (virtual source position).   Effect of 8 MeV electron irradiation on the optical properties of doped polymer electrolyte films. Subramanya Kilarkaje 1, V Manjunatha 1, S Raghu 1, M V N Ambika Prasad 2 and H Devendrappa 1,3. Published 21 February • IOP Publishing Ltd Journal of Physics D: Applied Physics, Vol Number

    Since the discovery of high temperature superconductors, many new materials have been invented. In the last year, several new materials were also discovered, but their critical temperatures are still below lOOK. Enhancement of Critical Current Density of Ba2YCu3Oy by 28 MeV Electron Irradiation. Pages Y-Ba-Cu-O Films Grown on. The authors report an investigation of the effect of different doses of 5 MeV proton irradiation on circular-shaped AlGaN/GaN high electron mobility transistors. The degradation of saturation drain current (IDSS) was minimal up to an irradiation dose of .

    @article{osti_, title = {Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4H-SiC (CVD)}, author = {Kozlovski, V. V. and Lebedev, A. A., E-mail: @ and Bogdanova, E. V. and Seredova, N. V.}, abstractNote = {The compensation of moderately doped p-4H-SiC samples grown by the chemical. We explore the mechanism of MeV and sub‐MeV electron precipitations into the atmosphere in the outer radiation belt, through quasi‐linear pitch‐angle scattering by electromagnetic ion cyclotron (EMIC) waves, when strong compressional Pc4–Pc5 ultralow‐frequency (ULF) waves are simultaneously present.


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Effects of 67.5 MeV electron irradation on Y-Ba-Cu-O high-temperature superconductors by Eric Lynn Sweigard Download PDF EPUB FB2

Calhoun: The NPS Institutional Archive Theses and Dissertations Thesis Collection Effects of MeV electron irradiation on Y-Ba-Cu-O high-temperature superconductors. High-temperature superconductors (YBa2Cu3O6+delta and GdBa2Cu3O6+delta, both with delta less than or equal to 1) with Tc approx.

92K and manufactured at the University of Houston were irradiated with MeV electrons at fluences of 10 to the 13th, 10 to the 14th, 10 to the 15th and 5 x 10 to the 15th electrons/sq. The irradiation effects were studied by analyzing resistance versus Author: Eric L.

Sweigard. To submit an update or takedown request for this paper, please submit an Update/Correction/Removal : Eric Lynn. Sweigard and Fred R. Buskirk. In this study, the effect of electron irradiation on TiO2 added Bi superconductor ceramics was studied through phase and microstructure characteristics of irradiated and non-irradiated samples.

A Hastelloy alloy was irradiated with 10MeV electrons at °C for h to a total dose of 2×10−3 displacements per atom (dpa). The microstructure of Cited by: Estimation procedures of the proton fluence to the equivalent 1 MeV electron fluence and the results of sequential irradiation of electrons and protons are described.

A simple procedure is able to estimate the remaining factors of Voc after sequential irradiation and Isc after 10 MeV proton irradiation, but unable to estimate the remaining factors of Isc after 1 MeV protons irradiation because. The experimental results of a 10 MeV proton irradiation on concentrator GaInP/GaAs/Ge lattice-matched triple-junction solar cells and their corresponding component subcells are examined.

The analysis has been performed by means of in-situ and ex-situ electrical and optical characterization such as external quantum efficiency, dark and light I-V. Comparison of 1 MeV electron, Co gamma and 1 MeV proton irradiation effects on silicon NPN transistors.

Radiation Effects and Defects in Solids: Vol.No.pp. The effects of MeV electron (to × cm-2) and fast neutron irradiation (to × cm-2) on the superconducting properties of melt-textured YBa2Cu3O7-sigma is studied experimentally.

The nominal energy for skin electron therapy should range from 4 MeV to 8 MeV [17–20]. Electrons lose approximately 2 MeV/(g/cm2) while passing through the spoiler and air at extended source to surface distance (SSD) so that initially 6 MeV electrons arrive at the patient with an energy of around 4 MeV.

The influence of MeV electron irradiation on minority transport properties of Si doped β-Ga 2 O 3 vertical Schottky rectifiers was observed for fluences up to × 10 16 cm − Electron Beam-Induced Current technique was used to determine the minority hole diffusion length as a function of temperature for each irradiation dose.

(particle nano ampere) and for electron was 1 p-nA. The 5 MeV proton and 1 MeV electron irradiation was performed at room temperature at a dose ranging from 1 Mrad(Si) to Mrad(Si)in experimental chamber maintained at a vacuum of mbar andall the terminals of the transistors were grounded during irradiation.

The effect of 3 MeV electron irradiation on the photoluminescence (PL) properties of Eu-doped GaN was investigated. Eu was introduced into GaN epitaxial layers grown on sapphire substrates by ion implantation. The peak concentration of implanted Eu was found to be a few atomic percent.

The electron dose was in the range of 10 16 –3×10 17 cm. The effect of 8MeV electron beam irradiation on the structural, optical and electrical properties of a PANI-MnWO4 nanocomposite synthesized by in situ chemical oxidative polymerization in the presence of MnWO4 nanoparticles was investigated.

The dose-dependent effect of electron irradiation was studied using various characterization techniques, such as X-ray diffraction, Fourier. In this paper we study the radiation resistance of high temperature superconductor (HTS) tapes based on GdBCO produced by SuperOx‐Japan Company to proton irradiation with an energy of MeV in the fluence range from ×10 14 p/cm 2 to 1×10 17 p/cm dependences of critical parameters on radiation fluencies were investigated.

The effect of MeV electron-beam irradiation on Si-SiO 2 structures was studied. The Si-SiO 2 samples were fabricated on n-type -oriented Si wafers with resistivity of Ω cm. Following a standard cleaning procedures, thermal oxidation in dry O 2 + 8 % HCl ambient was performed at °C to produce oxide layer with a thickness of nm.

After oxidation, the samples. Electron‐irradiation‐induced gold atom implantation into α‐SiC and β‐Si 3 N 4 has been studied by ultrahigh voltage electron microscopy (UHVEM).

Bilayer films of Au(target atom)/α‐SiC (substrate) and of Au (target atom)/β‐Si 3 N 4 (substrate) were irradiated with 2‐MeV electrons in a UHVEM with the electron beam incident on the gold layer. In the Au/α‐SiC system.

Effect of MeVelectron irradiation on b-Ga 2O 3 carrier lifetime and diffusion length Jonathan Lee,1 Elena Flitsiyan,1 Leonid Chernyak,1,a) Jiancheng Yang,2 Fan Ren,2 Stephen J. Pearton,3 Boris Meyler,4 and Y. Joseph Salzman4 1Department of Physics, University of Central Florida, Orlando, FloridaUSA 2Department of Chemical Engineering, University of Florida, Gainesville, Florida.

The reverse leakage currents of ion-implanted LPE HgCdTe photodiodes increase significantly after 6 MeV electron irradiations to fluences of effects of K annealing are shown. Where h FEO and h FE are the gain values before and after irradiation is the fluence and K is the displacement damage constant.

In order to calculate a displacement damage factor, it is necessary to convert from dose (rad(s)) to effective electron fluence. The rad equivalent 1 Mev electron fluence is about ×10 7 p/cm 2 [4].

Fig. 2 shows. Abstract: The impact of proton and electron irradiations on the electrical parameters of 4H-SiC nMOSFETs has been investigated by the time bias stress instability method. This study has allowed observing the effect of holes trapped in the gate oxide together with the generated interface traps.

Improvements of important electrical parameters, such as the threshold voltage, the effective.The total dose effects of 80 MeV carbon ions and 60 Co gamma radiation in the dose range from 1 Mrad to Mrad on advanced GHz Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) are investigated.

The stopping and range of ions in matter (SRIM) simulation study was conducted to understand the energy loss of 80 MeV carbon ions in SiGe HBT structure.Lexan polycarbonate films were irradiated by 8MeV electron beam at different fluences and characterized using X-ray Diffractogram (XRD), UV-Visible spectroscopy, Fourier Transform Infrared (FTIR) spectroscopy, Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA).

The structural parameters such as degree of crystallinity and crystallite size were found to decrease .